Solution for Substrate/epitaxial wafer EPD dislocation Inspection

The shape and distribution of dislocation defects in the preparation of semiconductor wafers have a great impact on the performance of electronic components. Due to different doping materials and preparation processes, the dislocation distribution is also different. This solution is mainly aimed at the shape and distribution of wafer dislocations, and is committed to providing data support for wafer material research and improvement of preparation process. It is applicable to 2-inch, 3-inch, 4-inch and 6-inch GaAs substrates.

特色方案

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  Convenient and efficient

  Convenient and efficient surface defect detection equipment for wafers, substrates and epitaxial wafers. Main defects: dislocations, particles, pits, scratches, stains, etc.

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  Improve efficiency and accuracy

  It replaces manual sampling inspection and greatly improves the detection efficiency and accuracy.

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  Data support+automation

  Check the dislocation density, morphology and distribution of the substrate and epitaxial wafer to provide data support for substrate material research, defect traceability, and improvement of preparation process;

  Automatic image acquisition and artificial intelligence analysis tools.

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  High quality service

  Reliable equipment, long trouble free working time, fast response+high-quality after-sales service.